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Brand Name : Anterwell
Model Number : ISL9V3040S3ST
Certification : new & original
Place of Origin : original factory
MOQ : 10pcs
Price : Negotiate
Payment Terms : T/T, Western Union, Paypal
Supply Ability : 10000pcs
Delivery Time : 1 day
Packaging Details : Please contact me for details
Collector to Emitter Breakdown Voltage : 430 V
Gate to Emitter Voltage Continuous : ±10 V
Operating Junction Temperature : -40 to 175 °C
Storage Junction Temperature : -40 to 175 °C
Max Lead Temp for Soldering (Package Body for 10s) : 260 °C
Electrostatic Discharge Voltage at 100pF, 1500Ω : 4 kV
ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3
EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT
General Description
The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO- 220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components.
EcoSPARK™ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.
Formerly Developmental Type 49362
Applications
• Automotive Ignition Coil Driver Circuits
• Coil- On Plug Applications
Features
• Space saving D-Pak package availability
• SCIS Energy = 300mJ at TJ = 25℃
• Logic Level Gate Drive
Device Maximum Ratings TA = 25°C unless otherwise noted
Symbol | Parameter | Ratings | Units |
---|---|---|---|
BVCER | Collector to Emitter Breakdown Voltage (IC = 1 mA) | 430 | V |
BVECS | Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) | 24 | V |
ESCIS25 | At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy | 300 | mJ |
ESCIS150 | At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy | 170 | mJ |
IC25 | Collector Current Continuous, At TC = 25°C, See Fig 9 | 21 | A |
IC110 | Collector Current Continuous, At TC = 110°C, See Fig 9 | 17 | A |
VGEM | Gate to Emitter Voltage Continuous | ±10 | V |
PD | Power Dissipation Total TC = 25°C | 150 | W |
Power Dissipation Derating TC > 25°C | 1.0 | W/°C | |
TJ | Operating Junction Temperature Range | -40 to 175 | °C |
TSTG | Storage Junction Temperature Range | -40 to 175 | °C |
TL | Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) | 300 | °C |
Tpkg | Max Lead Temp for Soldering (Package Body for 10s) | 260 | °C |
ESD | Electrostatic Discharge Voltage at 100pF, 1500Ω | 4 | kV |
Package Symbol
Stock Offer (Hot Sell)
Part No. | Quantity | Brand | D/C | Package |
SGB15N60HS | 14664 | 14+ | TO-263 | |
SPB20N60S5 | 12954 | 12+ | TO-263 | |
TLE4271-2G | 13546 | 06+ | TO-263 | |
T2P50E | 11024 | ON | 16+ | TO-263 |
RJP30H2ADPE-00-J3 | 16680 | RENESAS | 15+ | TO-263 |
SI8050JD | 37152 | SANKEN | 13+ | TO-263 |
SI-8050SD | 8028 | SANKEN | 13+ | TO-263 |
STB20NM50T4 | 2057 | ST | 12+ | TO-263 |
STB30NF10T4 | 22440 | ST | 11+ | TO-263 |
STGB7NC60HDT4 | 6436 | ST | 16+ | TO-263 |
STPS20L45CG | 10688 | ST | 16+ | TO-263 |
STTH3002CG | 11196 | ST | 15+ | TO-263 |
T1235-800G-TR | 16188 | ST | 05+ | TO-263 |
T1635-700G-TR | 15872 | ST | 10+ | TO-263 |
T1635-800G-TR | 11480 | ST | 16+ | TO-263 |
T835H-6G-TR | 17672 | ST | 11+ | TO-263 |
TLE4271G | 12806 | INFIENON | 16+ | TO-263 |
SPB21N50C3 | 8860 | 16+ | TO-263 | |
TOP244R-TL | 16428 | POWER | 16+ | TO-263 |
STB140NF75T4 | 18152 | ST | 13+ | TO-263 |
STB180N55F3 | 18716 | ST | 16+ | TO-263 |
STPS30L30CG | 8124 | ST | 13+ | TO-263 |
STPS30L60CW | 30036 | ST | 04+ | TO-263 |
TOP244FN | 16330 | POWER | 15+ | TO-262 |
TLE4270D | 8006 | 16+ | TO-252-5 | |
RFD14N05LSM | 15566 | FAIRCHILD | 16+ | TO-252 |
RFD16N05LSM | 12150 | FAIRCHILD | 10+ | TO-252 |
RFD3055LESM9A | 7934 | FAIRCHILD | 16+ | TO-252 |
TJ3965GRS-1.2 | 7788 | HTC | 16+ | TO-252 |
SPD03N60C3 | 13272 | 11+ | TO-252 |
ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor Images |