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ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor

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ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor

Brand Name : Anterwell

Model Number : ISL9V3040S3ST

Certification : new & original

Place of Origin : original factory

MOQ : 10pcs

Price : Negotiate

Payment Terms : T/T, Western Union, Paypal

Supply Ability : 10000pcs

Delivery Time : 1 day

Packaging Details : Please contact me for details

Collector to Emitter Breakdown Voltage : 430 V

Gate to Emitter Voltage Continuous : ±10 V

Operating Junction Temperature : -40 to 175 °C

Storage Junction Temperature : -40 to 175 °C

Max Lead Temp for Soldering (Package Body for 10s) : 260 °C

Electrostatic Discharge Voltage at 100pF, 1500Ω : 4 kV

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ISL9V3040D3S / ISL9V3040S3S / ISL9V3040P3 / ISL9V3040S3

EcoSPARKTM 300mJ, 400V, N-Channel Ignition IGBT

General Description

The ISL9V3040D3S, ISL9V3040S3S, ISL9V3040P3, and ISL9V3040S3 are the next generation ignition IGBTs that offer outstanding SCIS capability in the space saving D-Pak (TO-252), as well as the industry standard D²-Pak (TO-263), and TO-262 and TO- 220 plastic packages. This device is intended for use in automotive ignition circuits, specifically as a coil driver. Internal diodes provide voltage clamping without the need for external components.

EcoSPARK™ devices can be custom made to specific clamp voltages. Contact your nearest Fairchild sales office for more information.

Formerly Developmental Type 49362

Applications

• Automotive Ignition Coil Driver Circuits

• Coil- On Plug Applications

Features

• Space saving D-Pak package availability

• SCIS Energy = 300mJ at TJ = 25℃

• Logic Level Gate Drive

Device Maximum Ratings TA = 25°C unless otherwise noted

Symbol Parameter Ratings Units
BVCER Collector to Emitter Breakdown Voltage (IC = 1 mA) 430 V
BVECS Emitter to Collector Voltage - Reverse Battery Condition (IC = 10 mA) 24 V
ESCIS25 At Starting TJ = 25°C, ISCIS = 14.2A, L = 3.0 mHy 300 mJ
ESCIS150 At Starting TJ = 150°C, ISCIS = 10.6A, L = 3.0 mHy 170 mJ
IC25 Collector Current Continuous, At TC = 25°C, See Fig 9 21 A
IC110 Collector Current Continuous, At TC = 110°C, See Fig 9 17 A
VGEM Gate to Emitter Voltage Continuous ±10 V
PD Power Dissipation Total TC = 25°C 150 W
Power Dissipation Derating TC > 25°C 1.0 W/°C
TJ Operating Junction Temperature Range -40 to 175 °C
TSTG Storage Junction Temperature Range -40 to 175 °C
TL Max Lead Temp for Soldering (Leads at 1.6mm from Case for 10s) 300 °C
Tpkg Max Lead Temp for Soldering (Package Body for 10s) 260 °C
ESD Electrostatic Discharge Voltage at 100pF, 1500Ω 4 kV

Package Symbol

ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor ISL9V3040S3ST Power Mosfet Transistor N-Channel Ignition IGBT Transistor

Stock Offer (Hot Sell)

Part No. Quantity Brand D/C Package
SGB15N60HS 14664 14+ TO-263
SPB20N60S5 12954 12+ TO-263
TLE4271-2G 13546 06+ TO-263
T2P50E 11024 ON 16+ TO-263
RJP30H2ADPE-00-J3 16680 RENESAS 15+ TO-263
SI8050JD 37152 SANKEN 13+ TO-263
SI-8050SD 8028 SANKEN 13+ TO-263
STB20NM50T4 2057 ST 12+ TO-263
STB30NF10T4 22440 ST 11+ TO-263
STGB7NC60HDT4 6436 ST 16+ TO-263
STPS20L45CG 10688 ST 16+ TO-263
STTH3002CG 11196 ST 15+ TO-263
T1235-800G-TR 16188 ST 05+ TO-263
T1635-700G-TR 15872 ST 10+ TO-263
T1635-800G-TR 11480 ST 16+ TO-263
T835H-6G-TR 17672 ST 11+ TO-263
TLE4271G 12806 INFIENON 16+ TO-263
SPB21N50C3 8860 16+ TO-263
TOP244R-TL 16428 POWER 16+ TO-263
STB140NF75T4 18152 ST 13+ TO-263
STB180N55F3 18716 ST 16+ TO-263
STPS30L30CG 8124 ST 13+ TO-263
STPS30L60CW 30036 ST 04+ TO-263
TOP244FN 16330 POWER 15+ TO-262
TLE4270D 8006 16+ TO-252-5
RFD14N05LSM 15566 FAIRCHILD 16+ TO-252
RFD16N05LSM 12150 FAIRCHILD 10+ TO-252
RFD3055LESM9A 7934 FAIRCHILD 16+ TO-252
TJ3965GRS-1.2 7788 HTC 16+ TO-252
SPD03N60C3 13272 11+ TO-252


Product Tags:

multi emitter transistor

      

silicon power transistors

      
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