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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Brand Name : IXYS

Model Number : IXFH60N50P3

Certification : Original Factory Pack

Place of Origin : Philippines

MOQ : 20

Price : Negotiate

Payment Terms : T/T, Western Union,Paypal

Supply Ability : 20000

Delivery Time : 1

Packaging Details : please contact me for details

IXFQ : TO-3P

IXFH : TO-247

Features : Fast Intrinsic Rectifier ,Avalanche Rated ,Low RDS(ON) and QG

Advantages : z High Power Density z Easy to Mount z Space Savings

Applications : Switch-Mode and Resonant-Mode Power Supplies z DC-DC Converters z Laser Drivers z AC and DC Motor Drives

Weight : TO-268 4.0 g TO-3P 5.5 g TO-247 6.0 g

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Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Polar3TM HiperFETTM IXFT60N50P3 VDSS = 500V

Power MOSFET IXFQ60N50P3 I D25 = 60A

IXFH60N50P3 RDS(on) ≤ 100mΩ

N-Channel Enhancement Mode Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Avalanche Rated

Fast Intrinsic Rectifier

Symbol Test Conditions Maximum Ratings

VDSS

VDGR

TJ = 25°C to 150°C

TJ = 25°C to 150°C, RGS = 1MΩ

500 V

500 V

VGSS

VGSM

Continuous

Transient

± 30 V

± 40 V

I D25

I DM

TC = 25°C

TC = 25°C, Pulse Width Limited by TJM

60 A

150 A

I A

EAS

TC = 25°C

TC = 25°C

30 A

1 J
dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns
PD TC = 25°C 1040 W

TJ

TJM

Tstg

-55 ... +150 °C

150 °C

-55 ... +150 °C

TL

Tsold

1.6mm (0.062in.) from Case for 10s

Plastic Body for 10 seconds

300 °C

260 °C
Md Mounting Torque (TO-247 & TO-3P) 1.13 / 10 Nm/lb.in.
Weight

TO-268

TO-3P

TO-247

4.0 g

5.5 g

6.0 g

Features Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Fast Intrinsic Rectifier

Avalanche Rated

Low RDS(ON) and QG

Low Package Inductance

Advantages

High Power Density

Easy to Mount

Space Savings

Applications

Switch-Mode and Resonant-Mode Power Supplies

DC-DC Converters z Laser Drivers

AC and DC Motor Drives

Robotics and Servo Controls

Fig. 1. Output Characteristics @ TJ = 25ºC Fig. 2. Extended Output Characteristics @ TJ = 25ºC

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Fig. 3. Output Characteristics @ TJ = 125ºC Fig. 4. RDS(on) Normalized to ID = 30A Value vs. Junction Temperature

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Fig. 5. RDS(on) Normalized to ID = 30A Value vs. 6. Maximum Drain Current vs. Case Drain CurrentFig. Temperature

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier

Fig. 7. Input Admittance Fig. 8. Transconductance

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier


Product Tags:

npn smd transistor

      

silicon power transistors

      
Quality Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier for sale

Switching Power Mosfet Transistor IXFH60N50P3 Fast Intrinsic Rectifier Images

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